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1. general description the TDF8590TH is a high ef?ciency class-d audio power ampli?er with low power dissipation for application in car audio systems. the typical output power is 2 80 w into 4 w . the TDF8590TH is available in a hsop24 power package with a small internal heat sink. depending on the supply voltage and load conditions, a small or even no external heat sink is required. the ampli?er operates over a wide supply voltage range from 14 v to 29 v and consumes a low quiescent current. 2. features n zero dead time switching n advanced output current protection n no dc offset induced pop noise at mode transitions n high ef?ciency n supply voltage from 14 v to 29 v n low quiescent current n usable as a stereo single-ended (se) ampli?er or as a mono ampli?er in bridge-tied load (btl) n fixed gain of 26 db in se and 32 db in btl n high output power: 160 w into 8 w , 80 w into 4 w n suitable for speakers in the range of 2 w to 8 w n high supply voltage ripple rejection n internal oscillator or synchronized to an external clock n full short-circuit proof outputs across load and to supply lines n thermal foldback and thermal protection 3. ordering information TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er rev. 01 13 june 2006 preliminary data sheet table 1. ordering information type number package name description version TDF8590TH hsop24 plastic, heatsink small outline package; 24 leads; low stand-off height sot566-3
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 2 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er 4. block diagram 5. pinning information 5.1 pinning fig 1. block diagram 001aad834 v ddp2 v ssp1 driver high out2 boot2 TDF8590TH driver low release1 switch1 enable1 control and handshake pwm modulator manager oscillator temperature sensor current protection voltage protection stabi mode input stage mute 9 8 in1m in1p 22 21 20 17 v ssp2 v ssp1 driver high driver low release2 switch2 enable2 control and handshake pwm modulator 11 sgnd1 7 osc 2 sgnd2 6 mode input stage mute 5 4 in2m in2p out1 boot1 15 16 19 24 v ssd n.c. 1 v ssa2 12 v ssa1 3 v dda2 10 v dda1 23 13 18 14 v ddp2 diag stabi v ddp1 fig 2. pin con?guration TDF8590TH v ssd v ssa2 v ddp2 sgnd2 boot2 v dda2 out2 in2m v ssp2 in2p n.c. mode stabi osc v ssp1 in1p out1 in1m boot1 v dda1 v ddp1 sgnd1 diag v ssa1 001aad835 24 23 22 21 20 19 18 17 16 15 14 13 11 12 9 10 7 8 5 6 3 4 1 2
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 3 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er 5.2 pin description [1] the heatsink is internally connected to pin v ssd . 6. functional description 6.1 introduction the TDF8590TH is a dual channel audio power ampli?er using class-d technology. the audio input signal is converted into a pulse width modulated (pwm) signal via an analog input stage and pwm modulator. to enable the output power transistors to be driven, this digital pwm signal is applied to a control and handshake block and driver circuits for both the high-side and low-side. an external 2nd-order low-pass ?lter converts the pwm output signal to an analog audio signal across the loudspeakers. table 2. pin description symbol pin description v ssa2 1 negative analog supply voltage for channel 2 sgnd2 2 signal ground for channel 2 v dda2 3 positive analog supply voltage for channel 2 in2m 4 negative audio input for channel 2 in2p 5 positive audio input for channel 2 mode 6 mode selection input: standby, mute or operating osc 7 oscillator frequency adjustment or tracking input in1p 8 positive audio input for channel 1 in1m 9 negative audio input for channel 1 v dda1 10 positive analog supply voltage for channel 1 sgnd1 11 signal ground for channel 1 v ssa1 12 negative analog supply voltage for channel 1 diag 13 diagnostic for activated current protection v ddp1 14 positive power supply voltage for channel 1 boot1 15 bootstrap capacitor for channel 1 out1 16 pwm output from channel 1 v ssp1 17 negative power supply voltage for channel 1 stabi 18 decoupling of internal stabilizer for logic supply n.c. 19 not connected v ssp2 20 negative power supply voltage for channel 2 out2 21 pwm output from channel 2 boot2 22 bootstrap capacitor for channel 2 v ddp2 23 positive power supply voltage for channel 2 v ssd 24 negative digital supply voltage [1]
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 4 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er the TDF8590TH contains two independent ampli?er channels with a differential input stage, high output power, high ef?ciency (90 %), low distortion and a low quiescent current. the ampli?er channels can be connected in the following con?gurations: ? mono bridge-tied load (btl) ampli?er ? dual single-ended (se) ampli?ers the TDF8590TH also contains circuits common to both channels such as the oscillator, all reference sources, the mode functionality and a digital timing manager. for protection a thermal foldback, temperature, current and voltage protection are built in. 6.2 mode selection the TDF8590TH can be switched in three operating modes via pin mode: ? standby mode; the ampli?ers are switched off to achieve a very low supply current ? mute mode; the ampli?ers are switching idle (50 % duty cycle), but the audio signal at the output is suppressed by disabling the vi-converter input stages ? operating mode; the ampli?ers are fully operational with output signal the input stage (see figure 1 ) contributes to the dc offset measured at the ampli?er output. to avoid pop noise the dc output offset voltage should be increased gradually at a mode transition from mute to operating, or vice versa, by limiting the dv mode /dt on pin mode, resulting in a small dv o(offset) /dt for the dc output offset voltage. the required time constant for a gradually increase of the dc output offset voltage between mute and operating is generated via an rc network on pin mode. an example of a switching circuit for driving pin mode is illustrated in figure 3 and explained in t ab le 3 . fig 3. example of mode selection circuit table 3. mode selection s1 s2 mode selection closed closed standby mode closed open standby mode open closed mute mode open open operating mode 001aad836 5.6 k w 5.6 k w 5.6 v 5.6 k w s1 s2 mode sgnd 100 m f (10 v) v ddp
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 5 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er the value of the rc time constant should be dimensioned for 500 ms. if the 100 m f capacitor is left out of the application the voltage on pin mode will be applied with a much smaller time constant, which might result in audible pop noises during start-up (depending on dc output offset voltage and used loudspeaker). in order to fully charge the coupling capacitors at the inputs, the ampli?er will remain automatically in mute mode for approximately 150 ms before switching to operating mode. a complete overview of the start-up timing is given in figure 4 . 6.3 pulse width modulation frequency the output signal of the ampli?er is a pwm signal with a switching frequency that is set by an external resistor r ext(osc) connected between pins osc and v ssa . an optimum setting for the carrier frequency is between 300 khz and 350 khz. an external resistor r ext(osc) of 30 k w sets the frequency to 310 khz. fig 4. timing on mode selection input audio operating mute standby 5 v 2.5 v 0 v (sgnd) time v mode 100 ms > 50 ms switching audio operating standby 5 v 0 v (sgnd) time 001aad837 v mode 100 ms 50 ms switching
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 6 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er if two or more class-d ampli?ers are used in the same audio application, it is recommended to synchronize the switching frequency of all devices to an external clock (see section 12.3 ). 6.4 protections the following protections are included in TDF8590TH: ? thermal foldback (tf) ? overtemperature protection (otp) ? overcurrent protection (ocp) ? window protection (wp) ? supply voltage protections C undervoltage protection (uvp) C overvoltage protection (ovp) C unbalance protection (ubp) the reaction of the device on the different fault conditions differs per protection and is described in section 6.4.1 to section 6.4.5 . 6.4.1 thermal foldback if the junction temperature t j > 145 c, then the tf gradually reduced the gain, resulting in a smaller output signal and less dissipation. at t j = 155 c the outputs are fully muted. 6.4.2 overtemperature protection if t j > 160 c, then the otp will shut down the power stage immediately. 6.4.3 overcurrent protection the ocp will detect a short-circuit between the loudspeaker terminals or if one of the loudspeaker terminals is short-circuited to one of the supply lines. if the output current tends to exceed the maximum output current of 8 a, the output voltage of the TDF8590TH will be regulated to a level were the maximum output current is limited to 8 a while the ampli?er outputs remain switching, the ampli?er does not shut down. when this active current limiting continues longer than a time t (see figure 5 ) the capacitor on pin diag is discharged below a threshold value and the TDF8590TH shuts down. activation of current limiting and the triggering of the ocp is observed at pin diag (see figure 5 ). a maximum value for the capacitor on pin diag is 47 pf. the reference voltage on pin diag is v ssa . pin diag should not be connected to an external pull-up.
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 7 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er when the loudspeaker terminals are short-circuited and the ocp is triggered the TDF8590TH is switched off completely and will try to restart every 100 ms (see figure 6 ): ? 50 ms after switch off pin diag will be released ? 100 ms after switch off the ampli?er will return to mute ? 150 ms after switch off the ampli?er will return to operation. if the short-circuit condition is still present after this time this cycle will be repeated. the average dissipation will be low because of the small duty cycle. a short of the loudspeaker terminals to one of the supply lines will also trigger the activation of the ocp and the ampli?er will shut down. during restart the window protection will be activated. as a result the ampli?er will not start-up after 100 ms and pin diag will remain low until the short to the supply lines is removed. fig 5. pin diag with activated current limiting fig 6. restart of the TDF8590TH 001aad838 ? v ssa + 8 v ch1 mean 5.03 v m 20.0 ms a ch1 ~ 1.28 v ? v ssa + 2 v v ssa t 001aad839 input voltage current in the short (between the speaker terminals, 5 a/div) pwm output pin diag 50 ms 50.0 v ~ 5.00 v w ch2 ch4 500 mv ch3 1.80 v 10.0 v m 25.0 ms ch1 ch3 2 3 1 4 50 ms 50 ms
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 8 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er 6.4.4 window protection the wp checks the conditions at the output terminals of the power stage and is activated: ? during the start-up sequence, when pin mode is switched from standby to mute. in the event of a short-circuit at one of the output terminals to v dd or v ss the start-up procedure is interrupted and the TDF8590TH waits until the short to the supply lines has been removed. because the test is done before enabling the power stages, no large currents will ?ow in the event of a short-circuit. ? when the ampli?er is completely shut down due to activation of the ocp because a short to one of the supply lines is made, then during restart (after 100 ms) the window protection will be activated. as a result the ampli?er will not start-up until the short to the supply lines is removed. 6.4.5 supply voltage protections if the supply voltage drops below 12.5 v, the uvp circuit is activated and the TDF8590TH switch-off will be silent and without pop noise. when the supply voltage rises above 12.5 v, the TDF8590TH is restarted again after 100 ms. if the supply voltage exceeds 33 v the ovp circuit is activated and the power stages will shut down. it is re-enabled as soon as the supply voltage drops below 33 v. so in this case no timer of 100 ms is started. the maximum operating supply voltage is 29 v and if the supply voltage is above the maximal allowable voltage of 34 v (see section 7 ), the TDF8590TH can be damaged, irrespective of an activated ovp, see section 12.6 pumping eff ects for more information over the use of the ovp. an additional ubp circuit compares the positive analog (v dda ) and the negative analog (v ssa ) supply voltages and is triggered if the voltage difference between them exceeds the unbalance threshold level, which is expressed as follows: when the supply voltage difference v dda - v ssa exceeds v th(unb) , the TDF8590TH switches off and is restarted again after 100 ms. example: with a symmetrical supply of v dda = 20 v and v ssa = - 20 v, the unbalance protection circuit will be triggered if the unbalance exceeds approximately 6 v. in t ab le 4 an overview is given of all protections and the effect on the output signal. [1] ampli?er gain will depend on junction temperature and heat sink size. [2] thermal foldback will in?uence restart timing depending on heat sink size. table 4. overview protections TDF8590TH protection name complete shut down restart directly restart every 100 ms diag tf n y [1] nn otp y y [2] n [2] n ocp n [3] y [3] n [3] y wp y [4] yn y uvp y n y n ovp y y n n ubp y n y n v th unb () 0.15 v dda v ssa C () ?
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 9 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er [3] only complete shut down of ampli?er in case of a short-circuit. in all other cases current limiting resulting in clipping output signal. [4] fault condition detected during (every) transition between standby-to-mute and during restart after activation of ocp (short to one of the supply lines). 6.5 diagnostic output pin diag is pulled low when the ocp is triggered. with a continuous shorted load a switching pattern in the voltage on pin diag is observed (see figure 6 ). a permanent low on pin diag indicates a short to the supply lines whereas a shorted load causes a switching diag pin (see section 6.4.3 ). the pin diag reference voltage is v ssa . pin diag should not be connected to an external pull-up. an example of a circuit to read out and level shift the diagnostic data is given in figure 7 . v5v represents a logic supply that is used in the application by the m p that reads out the fault data. 6.6 differential inputs for a high common mode rejection ratio (cmrr) and a maximum of ?exibility in the application, the audio inputs are fully differential. by connecting the inputs anti-parallel the phase of one of the channels can be inverted, so that a load can be connected between the two output ?lters. in this case the system operates as a mono btl ampli?er. the input con?guration for a mono btl application is illustrated in figure 8 . in the stereo se con?guration it is also recommended to connect the two differential inputs in anti-phase. this has advantages for the current handling of the power supply at low signal frequencies (supply pumping). fig 7. diag readout circuit with level shift 001aad840 100 k w 100 k w 27 k w 5.6 v 10 k w v dda v ssa diag diag out sgnd m2 m1
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 10 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er 7. limiting values input resistors are referred to sgnd. fig 8. input con?guration for mono btl application 001aad841 in1p sgnd in1m in2p in2m v in in1p out1 power stage mbl466 out2 sgnd in1m in2p in2m table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v dd supply voltage v ddp1 and v dda1 referred to sgnd1; v ddp2 and v dda2 referred to sgnd2 - 0.3 +34 v v ss negative supply voltage) v ssp1 and v ssa1 referred to sgnd1; v ssp2 and v ssa2 referred to sgnd2 - 34 +0.3 v v p supply voltage - 0.3 +66 v i osm non-repetitive peak output current - 12 a t stg storage temperature - 55 +150 c t amb ambient temperature - 40 +85 c t j junction temperature - 40 +150 c v boot1 voltage on pin boot1 referred to out1 [1] 014v v boot2 voltage on pin boot2 referred to out2 [1] 014v v stabi voltage on pin stabi referred to v ssd [2] -14v v mode voltage on pin mode referred to sgnd2 0 8 v v osc voltage on pin osc referred to v ssd 040v v in1m voltage on pin in1m referred to sgnd1 - 5+5v
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 11 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er [1] pin boot should not be loaded by any other means than the boot capacitor. shorting pin boot to v ss will damage the device. [2] pin stabi should not be loaded by an external circuit. shorting pin stabi to a voltage source or v ss will damage the device. [3] pin diag should not be connected to a voltage source or to a pull-up resistor. an example of a circuit that can be used to r ead out diagnostic data is given in figure 7 . 8. thermal characteristics 9. static characteristics v in1p voltage on pin in1p referred to sgnd1 - 5+5v v in2m voltage on pin in2m referred to sgnd2 - 5+5v v in2p voltage on pin in2p referred to sgnd2 - 5+5v v diag voltage on pin diag referred to v ssd [3] 09v v o output voltage v ssp - 0.3 v ddp + 0.3 v table 5. limiting values continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit table 6. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case 1.1 k/w r th(j-a) thermal resistance from junction to ambient in free air 35 k/w table 7. static characteristics v p = 27 v; f osc = 310 khz; t amb = - 40 c to +85 c; t j = - 40 c to +150 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit supply v p supply voltage [1] 14 27 29 v i q(tot) total quiescent current no load, no ?lter, no snubber network connected - 5065ma i stb standby current t j = - 40 c to +85 c - 150 500 m a mode select input; pin mode (reference to sgnd2) i mode current on pin mode v mode = 5.5 v - 100 300 m a v mode voltage on pin mode standby mode [2] [3] 0 - 0.8 v mute mode [2] [3] 2.2 - 2.8 v operating mode [2] [3] 4.2 - 6 v diagnostic output; pin diag (reference to v ssd ) v ol low-level output voltage activated ocp or wp [4] - - 0.8 v v oh high-level output voltage no activated ocp or wp [4] - 8.4 9 v audio inputs; pins in1m, in1p (reference to sgnd1), in2p and in2m (reference to sgnd2) v i input voltage [2] -0 - v
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 12 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er [1] the circuit is dc adjusted at v p = 12.5 v to 30 v. [2] refers to usage in a symmetrical supply application (see section 12.7 ). in an asymmetrical supply application the sgnd voltage should be de?ned by an external circuit. [3] the transition between standby and mute mode contains hysteresis, while the slope of the transition between mute and operati ng mode is determined by the time constant on pin mode (see figure 9 ). [4] pin diag should not be connected to an external pull-up. [5] dc output offset voltage is applied to the output during the transition between mute and operating mode in a gradual way. th e dv o(offset) /dt caused by any dc output offset is determined by the time constant on pin mode. [6] at a junction temperature of approximately t act(th_fold) - 5 c the gain reduction will commence and at a junction temperature of approximately t act(th_fold) + 5 c the ampli?er mutes. ampli?er outputs; pins out1 and out2 v o(offset) output offset voltage se; mute - - 20 mv se; operating [5] - - 170 mv btl; mute - - 30 mv btl; operating [5] - - 240 mv stabilizer output; pin stabi (reference to v ssp1 ) v o output voltage mute and operating; with respect to v ssd 11 12.5 14 v temperature protection t prot protection temperature - 160 180 c t act(th_fold) thermal foldback activation temperature closed loop se voltage gain reduced with 6 db [6] 145 150 - c table 7. static characteristics continued v p = 27 v; f osc = 310 khz; t amb = - 40 c to +85 c; t j = - 40 c to +150 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit fig 9. behavior of pin mode stby mute on 5.5 001aad842 v mode (v) 4.2 2.8 2.2 0.8 0 v o(offset) mute operating slope is directly related to the time constant on pin mode
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 13 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er 10. dynamic characteristics 10.1 dynamic characteristics (se) [1] r s(l) is the series resistance of inductor of low-pass lc ?lter in the application. [2] output power is measured indirectly; based on r dson measurement (see section 12.3 ). [3] thd is measured in a bandwidth of 22 hz to 20 khz, aes brick wall. maximum limit is guaranteed but may not be 100 % tested. [4] v ripple = v ripple(max) = 2 v (peak-to-peak value); r s = 0 w . [5] b = 22 hz to 20 khz, aes brick wall (see section 12.4 ). [6] b = 22 hz to 20 khz, aes brick wall, independent on r s (see section 12.4 ). table 8. dynamic characteristics (se) v p = 27 v; r l = 4 w ; f i = 1 khz; f osc = 310 khz; r s(l) < 0.1 w [1] ; t amb = - 40 c to +85 c; t j = - 40 c to +150 c; unless otherwise speci?ed. see section 12.7 for the se application schematics. the 2nd-order demodulation ?lter coil is referred to as l and the capacitor as c. symbol parameter conditions min typ max unit p o output power l = 10 m h;c=1 m f; t j =85 c; r l =2 w ; v p = 18 v; thd = 0.5 % [2] -48-w l=10 m h;c=1 m f; t j =85 c; r l =2 w ; v p = 18 v; thd = 10 % [2] -60-w l = 22 m h; c = 680 nf; t j = 85 c; r l =4 w ; v p = 27 v; thd = 0.5 % [2] -65-w l = 22 m h; c = 680 nf; t j = 85 c; r l =4 w ; v p = 27 v; thd = 10 % [2] -80-w i om peak output current current limiting, see section 6.4.3 8--a thd total harmonic distortion p o = 1 w; f i = 1 khz [3] - 0.02 0.2 % p o = 1 w; f i = 10 khz [3] - 0.10 - % g v(cl) closed-loop voltage gain 25 26 27 db svrr supply voltage ripple rejection operating; f ripple = 100 hz [4] -55-db operating; f ripple = 1 khz [4] 40 50 - db mute; f ripple = 1 khz [4] -55-db standby; f ripple = 100 hz [4] -80-db | z i(dif) | differential input impedance between the input pins inp and inm 45 68 - k w v n(o) noise output voltage operating; 27 v; r s = 0 w [5] - 170 - m v operating; 18 v; r s = 0 w [5] - 145 - m v mute; 27 v [6] - 125 - m v mute; 18 v [6] -85- m v a cs channel separation p o = 1 w; r s = 0 w ; f i = 1 khz - 70 - db |d g v | voltage gain difference - - 1 db a mute mute attenuation f i = 1 khz; v in = 1 v (rms value) - 73 - db cmrr common mode rejection ratio f i(cm) = 1 khz; v i(cm) = 1 v (rms value) - 75 - db
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 14 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er 10.2 dynamic characteristics (btl) [1] r s(l) is the series resistance of inductor of low-pass lc ?lter in the application. [2] output power is measured indirectly; based on r dson measurement (see section 12.3 ). [3] thd is measured in a bandwidth of 22 hz to 20 khz, aes brick wall. maximum limit is guaranteed but may not be 100 % tested. [4] v ripple = v ripple(max) = 2 v (peak-to-peak value); r s = 0 w . [5] b = 22 hz to 20 khz, aes brick wall (see section 12.4 ). [6] b = 22 hz to 20 khz, aes brick wall, independent on r s (see section 12.4 ). table 9. dynamic characteristics (btl) v p = 27 v; r l = 8 w ; f i = 1 khz; f osc = 310 khz; r s(l) < 0.1 w [1] ; t amb = - 40 c to +85 c; t j = - 40 c to +150 c; unless otherwise speci?ed. see section 12.7 for the btl application schematics. the 2nd order demodulation ?lter coil is referred to as l and the capacitor as c. symbol parameter conditions min typ max unit p o output power l = 10 m h,c=1 m f; t j =85 c; r l =4 w ; v p = 18 v; thd = 0.5 % [2] -97-w l=10 m h;c=1 m f; t j =85 c; r l =4 w ; v p = 18 v; thd = 10 % [2] - 120 - w l = 22 m h; c = 680 nf; t j = 85 c; r l =8 w ; v p = 27 v; thd = 0.5 % [2] - 130 - w l = 22 m h; c = 680 nf; t j = 85 c; r l =8 w ; v p = 27 v; thd =10 % [2] - 160 - w i om peak output current current limiting, see section 6.4.3 8--a thd total harmonic distortion p o = 1 w; f i = 1 khz [3] - 0.02 0.2 % p o = 1 w; f i = 10 khz [3] - 0.15 - % g v(cl) closed loop voltage gain 31 32 33 db svrr supply voltage ripple rejection operating; f ripple = 100 hz [4] -68-db operating; f ripple = 1 khz [4] 50 68 - db mute; f ripple = 1 khz [4] -68-db standby; f ripple = 100 hz [4] -80-db | z i(dif) | differential input impedance measured between the input pins inp and inm 22 34 - k w v n(o) noise output voltage operating; 27 v; r s = 0 w [5] - 240 - m v operating; 18 v; r s = 0 w [5] - 200 - m v mute; 27 v [6] - 180 - m v mute; 18 v [6] 125 - m v a mute mute attenuation f i = 1 khz; v in = 1 v (rms value) - 70 - db cmrr common mode rejection ratio f i(cm) = 1 khz; v i(cm) = 1 v (rms value) - 75 - db
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 15 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er 11. switching characteristics 12. application information 12.1 btl application when using the power ampli?er in a mono btl application the inputs of both channels must be connected in parallel and the phase of one of the inputs must be inverted (see figure 7 ). the loudspeaker is connected between the outputs of the two single-ended demodulation ?lters. 12.2 output power estimation the achievable output powers in se and btl applications can be estimated using the following expressions: se: btl: table 10. switching characteristics v dd = +27 v; t amb = - 40 c to +85 c; t j = - 40 c to +150 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit internal oscillator f osc oscillator frequency typical; r ext(osc) = 30.0 k w 290 310 344 khz maximum; r ext(osc) = 15.4 k w - 560 - khz minimum; r ext(osc) = 48.9 k w - 200 - khz external oscillator or frequency tracking v h(osc)min minimum high-level voltage on pin osc referred to sgnd 4 - 6 v v l(osc)max maximum low-level voltage on pin osc referred to sgnd 0 - 1 v d f track tracking frequency range 210 - 600 khz drain source on-state resistance of the output transistors r dson(ls) low side drain source on-state resistance t j = 85 c; i ds = 6 a - 250 275 m w t j = 25 c; i ds = 6 a - 190 210 m w r dson(hs) high side drain source on-state resistance t j = 85 c; i ds = 6 a - 300 330 m w t j = 25 c; i ds = 6 a - 220 240 m w p o 0.5 % () r l r l r dson hs () r sl () ++ ------------------------------------------------------ v p 1t w min () C f osc () ? ?? 2 2r l ------------------------------------------------------------------------------------------------------------------------------- -- = p o 0.5 % () r l r l r dson hs () r dson ls () + () 2r sl () ++ ------------------------------------------------------------------------------------------- 2v p 1t w min () C f osc () ? ?? 2 2r l ------------------------------------------------------------------------------------------------------------------------------- ------------------------------------------ - =
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 16 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er peak output current, internally limited to 8 a: se: btl: variables: r l = load resistance r s(l) = series resistance of the ?lter coil r dson(hs) = high side drain source on-state resistance (temperature dependent) r dson(ls) = low side drain source on-state resistance (temperature dependent) f osc = oscillator frequency t w(min) = minimum pulse width (typical 150 ns, temperature dependent) v p = supply voltage [or 0.5 (v dd + v ss )] p o(0.5%) = output power at the onset of clipping i om should be below 8 a (see section 7 ). i om is the sum of the current through the load and the ripple current. the value of the ripple current is dependent on the coil inductance and voltage drop over the coil. 12.3 external clock if two or more class-d ampli?ers are used it is recommended that all devices run at the same switching frequency. this can be realized by connecting all osc pins together and feed them from an external oscillator. the internal oscillator requires an external r ext(osc) and c ext(osc) between pins osc and v ssa . for application of an external oscillator it is necessary to force osc to a dc level above sgnd. the internal oscillator is disabled and the pwm modulator will switch with the external frequency. the duty cycle of the external clock should be between 47.5 % and 52.5 % the noise contribution of the internal oscillator is supply voltage dependent. in low noise applications running at high supply voltage an external low noise oscillator is recommended. 12.4 noise noise should be measured using a high-order low-pass ?lter with a cut-off frequency of 20 khz. the standard audio band pass ?lters used in audio analyzers do not suppress the residue of the carrier frequency suf?ciently to ensure a reliable measurement of the audible noise. noise measurements should preferably be carried out using aes 17 (brick wall) ?lters or the audio precision aux 0025 ?lter, which was designed especially for measuring switching (class-d) ampli?ers. i om v p 1t w min () C f osc () r l r dson hs () r sl () ++ ----------------------------------------------------------- - = i om 2v p 1t w min () C f osc () C r l r dson hs () r dson ls () + () 2r sl () ++ ------------------------------------------------------------------------------------------- =
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 17 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er 12.5 heat sink requirements in some applications it may be necessary to connect an external heat sink to the TDF8590TH. the thermal foldback activates on t j = 140 c. the expression below shows the relationship between the maximum power dissipation before activation of the thermal foldback and the total thermal resistance from junction to ambient: the power dissipation is determined by the ef?ciency h of the TDF8590TH. the ef?ciency measured as a function of output power is given in figure 23 . the power dissipation can be derived as function of output power (see figure 24 ). example of a heatsink calculation for the 8 w btl application with 27 v supply: ? an audio signal with a crest factor of 10 (the ratio between peak power and average power is 10 db), this means that the average output power is 1/10th of the peak power ? the peak rms output power level is 130 w (0.5 % thd level) ? the average power is 0.1 130 w = 13 w ? the dissipated power at an output power of 13 w is approximately 5 w ? the total r th(j-a) = (140 - 85)/5 = 11 k/w, if the maximum expected t amb = 85 c ? the total thermal resistance r th(j-a) = r th(j-c) + r th(c-h) + r th(h-a) ? r th(j-c) = 1.1 k/w, r th(c-h) = 0.5 k/w to 1 k/w (dependent on mounting), so r th(h-a) would then be: 11 - (1.1 + 1) = 8.9 k/w 12.6 pumping effects when the TDF8590TH is used in a se con?guration, a so-called pumping effect can occur. during one switching interval, energy is taken from one supply (e.g. v dda1 ), while a part of that energy is delivered back to the other supply line (e.g. v ssa1 ) and visa versa. when the voltage supply source cannot sink energy, the voltage across the output capacitors of that voltage supply source will increase: the supply voltage is pumped to higher levels. the voltage increase caused by the pumping effect depends on: ? speaker impedance ? supply voltage ? audio signal frequency ? value of decoupling capacitors on supply lines ? source and sink currents of other channels r th j a C () t j t amb C p ----------------------- - =
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 18 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er the pumping effect should not cause a malfunction of either the audio ampli?er and/or the voltage supply source. for instance, this malfunction can be caused by triggering of the uvp, ovp or ubp of the ampli?er. best remedy for pumping effects is to use the TDF8590TH in a mono full-bridge application. in case of dual half-bridge application adapt the power supply (e.g. increase supply decoupling capacitors). 12.7 application schematics for se application (see figure 10 ): ? a solid ground plane around the TDF8590TH is necessary to prevent emission ? 100 nf smd capacitors must be placed as close as possible to the power supply pins of the TDF8590TH ? the heatsink of the hsop24 package of the TDF8590TH is connected to pin v ssd ? the external heatsink must be connected to the ground plane ? use a thermal conductive, electrically isolating silpad between the backside of the TDF8590TH and the external heatsink for btl application (see figure 11 ): ? a solid ground plane around the TDF8590TH is necessary to prevent emission ? 100 nf smd capacitors must be placed as close as possible to the power supply pins of the TDF8590TH ? the heatsink of the hsop24 package of the TDF8590TH is connected to pin v ssd ? the external heatsink must be connected to the ground plane ? use a thermal conductive, electrically isolating silpad between the backside of the TDF8590TH and the external heatsink ? the differential inputs enable the best system level audio performance with unbalanced signal sources. in case of hum due to ?oating inputs connect the shielding or source ground to the ampli?er ground. the jumper j1 is open on set level and is closed on the stand-alone demo board. ? minimum total required capacity per power supply line is 3300 m f
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 19 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er fig 10. se application schematic 001aad843 c18 in1p in1 in2 in1m sgnd1 fb gnd sgnd2 8 9 11 2 5 4 31 c19 220 pf c23 1 nf c17 1 nf c30 1 nf c25 1 nf r8 470 nf 5.6 k w r3 5.6 k w 470 nf 5.6 k w c20 r10 c26 in2p in2m fb gnd fb gnd c28 220 pf r11 470 nf 5.6 k w r13 10 w r14 22 w out2m out2p ls2 c32 100 nf c9 100 nf c31 fb gnd 470 nf 5.6 k w c29 100 nf v dda v ssa 19 24 13 v ssa v ssp v dda2 v ssa2 diag n.c. 20 21 22 v ssp v ssp2 out2 boot2 23 v ddp v ddp2 v ssd c34 100 nf c35 fb gnd fb gnd 100 nf v dda v ssa c12 100 nf c13 v dda1 v ssa1 100 nf c37 15 nf c27 l4 100 nf c39 100 nf c38 v ssp v ddp 17 v ssp1 14 v ddp1 6 mode 7 12 10 osc 100 nf c14 100 nf c16 100 nf c15 47 m f (63 v) c8 c4 100 m f (10 v) c3 470 m f (35 v) c6 470 m f (35 v) c33 47 pf 18 stabi c36 100 nf v ddp c40 220 pf c10 220 pf v ssp c41 220 pf r12 r2 10 w r5 10 w r7 10 w r6 30 k w r9 22 w r4 5.6 k w r1 5.6 k w dz1 5v6 s2 c2 47 m f (35 v) c5 47 m f (35 v) c1 100 nf 1 c7 100 nf s1 out1p out1m ls1 ls1/ls2 l3/l4 c22/c31 2 w 10 m h1 m f 4 w 22 m h 680 nf 6 w 33 m h 470 nf 8 w 47 m h 330 nf c24 100 nf c22 fb gnd 16 15 out1 boot1 15 nf c21 l3 l1 bead v dd con1 gnd v ss + 25 v - 25 v l2 bead v ddp v ssa on/off operate/mute v ddp v dda v ddp v ssp v ssa v ssp single-ended output filter values c11 220 pf 2 3 TDF8590TH
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 20 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er fig 11. btl application schematic 001aad844 c18 in1p in1 in1m sgnd1 fb gnd sgnd2 8 9 11 2 5 4 31 c19 220 pf c23 1 nf c25 1 nf r8 1 m f 5.6 k w r3 5.6 k w 1 m f 5.6 k w c20 r10 in2p in2m fb gnd fb gnd c28 220 pf r13 10 w r14 22 w c32 100 nf c9 100 nf c31 fb gnd 100 nf v dda v ssa 19 24 13 v ssa v ssp v dda2 v ssa2 diag n.c. 20 21 22 v ssp v ssp2 out2 boot2 23 v ddp v ddp2 v ssd c34 100 nf c35 fb gnd fb gnd 100 nf v dda v ssa c12 100 nf c13 v dda1 v ssa1 100 nf c37 15 nf c27 l4 100 nf c39 100 nf c38 v ssp v ddp 17 v ssp1 14 v ddp1 6 mode 7 12 10 osc 100 nf c14 100 nf c16 100 nf c15 47 m f (63 v) c8 c4 100 m f (10 v) c3 470 m f (35 v) c6 470 m f (35 v) c33 47 pf 18 stabi c36 100 nf v ddp c40 220 pf c10 220 pf v ssp c41 220 pf r2 10 w r5 10 w r7 10 w r6 30 k w r9 22 w r4 5.6 k w r1 5.6 k w dz1 5v6 s2 c2 47 m f (35 v) c5 47 m f (35 v) c1 100 nf 1 c7 100 nf s1 j1 out1p out2m ls1 load l c 4 w 10 m h1 m f 8 w 22 m h 680 nf c24 100 nf c22 fb gnd 16 15 out1 boot1 15 nf c21 l3 l1 bead v dd con1 gnd v ss + 25 v - 25 v l2 bead v ddp v ssa on/off operate/mute v ddp v dda v ddp v ssp v ssa v ssp bridge-tied load output filter values c11 220 pf 2 3 TDF8590TH
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 21 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er 12.8 curves measured in reference design (1) f = 10 khz. (2) f = 1 k hz. (3) f = 100 hz. (1) f = 10 khz. (2) f = 1 k hz. (3) f = 100 hz. a. v p = 27 v; r l =4 w .b.v p = 18 v; r l =2 w . fig 12. total harmonic distortion as a function of output power, se application 001aad845 p o (w) 10 - 1 10 2 10 1 10 - 1 10 - 2 10 1 10 2 thd (%) 10 - 3 (1) (2) (3) 001aad846 p o (w) 10 - 1 10 2 10 1 10 - 1 10 - 2 10 1 10 2 thd (%) 10 - 3 (3) (2) (1) (1) f = 10 khz. (2) f = 1 k hz. (3) f = 100 hz. (1) f = 10 khz. (2) f = 1 k hz. (3) f = 100 hz. a. v p = 27 v; r l =8 w b. v p = 18 v; r l =4 w fig 13. total harmonic distortion as a function of output power, btl application 001aad847 10 - 1 10 - 2 10 1 10 2 thd (%) 10 - 3 p o (w) 10 - 1 10 3 10 2 110 (3) (2) (1) 001aad848 10 - 1 10 - 2 10 1 10 2 thd (%) 10 - 3 p o (w) 10 - 1 10 3 10 2 110 (1) (3) (2)
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 22 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er p o = 1 w. (1) v p = 27 v; r l =4 w . (2) v p = 18 v; r l =2 w . p o = 1 w. (1) v p = 18 v; r l =4 w . (2) v p = 27 v; r l =8 w . a. se application b. btl application fig 14. total harmonic distortion as a function of frequency 001aad849 10 - 1 10 - 2 1 thd (%) 10 - 3 f (khz) 10 - 2 10 2 10 10 - 1 1 (1) (2) 001aad850 10 - 1 10 - 2 1 thd (%) 10 - 3 f (khz) 10 - 2 10 2 10 10 - 1 1 (1) (2) p o = 1 w; r s = 0 w . (1) v p = 27 v; r l =4 w . (2) v p = 18 v; r l =2 w . v cm = 1 v (rms); r l =4 w ; plus and minus input dc shorted. (1) se application. (2) btl application. fig 15. channel separation as a function of frequency fig 16. common mode rejection ratio as a function of frequency 001aad851 40 60 20 80 100 a cs (db) 0 f (khz) 10 - 2 10 2 10 10 - 1 1 (1) (2) 001aad852 80 90 cmrr (db) 70 f (khz) 10 - 2 10 2 10 10 - 1 1 (1) (2)
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 23 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er v p = 27 v; r l =4 w ; r s = 0 w ; v ripple = 2 v (p-p). (1) ripple on both supply lines, ripple in phase. (2) ripple on both supply lines, ripple in antiphase. (3) ripple on one supply line. v p = 27 v; r l =4 w; r s =0 w; v ripple = 2 v (p-p) (1) ripple on both supply lines, ripple in phase. (2) ripple on both supply lines, ripple in antiphase. (3) ripple on one supply line. a. se application; standby mode b. se application; mute mode fig 17. supply voltage ripple rejection as a function of frequency 001aad853 80 100 120 svrr (db) 60 f (khz) 10 - 2 10 2 10 10 - 1 1 (1) (2) (3) 001aad854 40 60 20 80 100 svrr (db) 0 f (khz) 10 - 2 10 2 10 10 - 1 1 (1) (2) (3) v p = 27 v; r l =4 w ; r s = 0 w ; v ripple = 2 v (p-p). (1) ripple on both supply lines, ripple in phase. (2) ripple on both supply lines, ripple in antiphase. (3) ripple on one supply line. v p = 27 v; r l =8 w ; r s = 0 w ; v ripple = 2 v (p-p). (1) ripple on one supply line. (2) ripple on both supply lines, ripple in antiphase. (3) ripple on both supply lines, ripple in phase. a. se application; operating mode b. btl application; standby mode fig 18. supply voltage ripple rejection as a function of frequency 001aad855 40 60 20 80 100 svrr (db) 0 f (khz) 10 - 2 10 2 10 10 - 1 1 (1) (2) (3) 001aad856 90 100 80 110 120 svrr (db) 70 f (khz) 10 - 2 10 2 10 10 - 1 1 (1) (2) (3)
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 24 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er v p = 27 v; r l =8 w ; r s = 0 w ; v ripple = 2 v (p-p). (1) ripple on both supply lines, ripple in phase. (2) ripple on both supply lines, ripple in antiphase. (3) ripple on one supply line. v p = 27 v; r l =8 w ; r s = 0 w ; v ripple = 2 v (p-p). (1) ripple on one supply line. (2) ripple on both supply lines, ripple in antiphase. (3) ripple on both supply lines, ripple in phase. a. btl application; mute mode b. btl application; operating mode fig 19. supply voltage ripple rejection as a function of frequency 001aad857 60 50 70 80 svrr (db) 40 f (khz) 10 - 2 10 2 10 10 - 1 1 (1) (2) (3) 001aad858 60 50 70 80 svrr (db) 40 f (khz) 10 - 2 10 2 10 10 - 1 1 (1) (2) (3) v i = 1 v (rms). (1) se application; v p = 27 v; r l =4 w . (2) btl application; v p = 18 v; r l =4 w . fig 20. mute attenuation as a function of frequency 001aad859 40 60 20 80 100 a mute (db) 0 f (khz) 10 - 2 10 2 10 10 - 1 1 (1) (2)
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 25 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er f = 1 khz. (1) thd = 10 %. (2) thd = 0.5 %. f = 1 khz. (1) thd = 10 %. (2) thd = 0.5 %. a. r l =4 w b. r l =2 w fig 21. output power as a function of supply voltage, se application v p (v) 10 40 30 20 001aad860 40 80 120 p o (w) 0 (1) (2) v p (v) 10 20 18 14 16 12 001aad861 40 50 30 60 70 p o (w) 20 (1) (2) f = 1 khz. (1) thd = 10 %. (2) thd = 0.5 %. f = 1 khz. (1) thd = 10 %. (2) thd = 0.5 %. a. r l =8 w b. r l =4 w fig 22. output power as a function of supply voltage, btl application 001aad862 v p (v) 10 40 30 20 80 160 240 p o (w) 0 (1) (2) v p (v) 10 20 18 14 16 12 001aad863 80 100 60 120 140 p o (w) 40 (1) (2)
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 26 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er f = 1 khz. (1) v p = 27 v; r l =4 w . (2) v p = 18 v; r l =2 w . f = 1 khz. (1) v p = 27 v; r l =8 w . (2) v p = 18 v; r l =4 w . a. se application b. btl application fig 23. ef?ciency as a function of output power p o (w) 0 100 80 40 60 20 001aad865 40 60 20 80 100 n (%) 0 (1) (2) p o (w) 0 200 160 80 120 40 001aad867 40 60 20 80 100 n (%) 0 (1) (2) f = 1 khz. (1) v p = 18 v; r l =2 w . (2) v p = 27 v; r l =4 w . f = 1 khz. (1) v p = 18 v; r l =4 w . (2) v p = 27 v; r l =8 w . a. se application b. btl application fig 24. power dissipation as a function of output power p o (w) 0 100 80 40 60 20 001aad864 10 20 30 p (w) 0 (1) (2) p o (w) 0 200 160 80 120 40 001aad866 20 10 30 40 p (w) 0 (1) (2)
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 27 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er 13. package outline fig 25. package outline sot566-3 (hsop24) unit a 4 (1) references outline version european projection issue date 03-02-18 03-07-23 iec jedec jeita mm + 0.08 - 0.04 3.5 0.35 dimensions (mm are the original dimensions) notes 1. limits per individual lead. 2. plastic or metal protrusions of 0.25 mm maximum per side are not included. sot566-3 0 5 10 mm scale hsop24: plastic, heatsink small outline package; 24 leads; low stand-off height sot566-3 a max. detail x a 2 3.5 3.2 d 2 1.1 0.9 h e 14.5 13.9 l p 1.1 0.8 q 1.7 1.5 2.7 2.2 v 0.25 w 0.25 yz 8 0 q 0.07 x 0.03 d 1 13.0 12.6 e 1 6.2 5.8 e 2 2.9 2.5 b p c 0.32 0.23 e 1 d (2) 16.0 15.8 e (2) 11.1 10.9 0.53 0.40 a 3 a 4 a 2 (a 3 ) l p q a q d y x h e e c v m a x a b p w m z d 1 d 2 e 2 e 1 e 24 13 1 12 pin 1 index
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 28 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er 14. revision history table 11. revision history document id release date data sheet status change notice supersedes TDF8590TH_1 20060613 preliminary data sheet - -
TDF8590TH_1 ? koninklijke philips electronics n.v. 2006. all rights reserved. preliminary data sheet rev. 01 13 june 2006 29 of 30 philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er 15. legal information 15.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .semiconductors .philips .com. 15.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. philips semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local philips semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 15.3 disclaimers general information in this document is believed to be accurate and reliable. however, philips semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes philips semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use philips semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a philips semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. philips semiconductors accepts no liability for inclusion and/or use of philips semiconductors products in such equipment or applications and therefore such inclusion and/or use is for the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale philips semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .semiconductors .philips .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by philips semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 15.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. i 2 c-bus logo is a trademark of koninklijke philips electronics n.v. 16. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
philips semiconductors TDF8590TH 2 80 w se (4 w ) or 1 160 w btl (8 w ) class-d ampli?er ? koninklijke philips electronics n.v. 2006. all rights reserved. for more information, please visit: http://www.semiconductors.philips.com. for sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. date of release: 13 june 2006 document identifier: TDF8590TH_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 17. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 1 4 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 5.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 functional description . . . . . . . . . . . . . . . . . . . 3 6.1 introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 mode selection . . . . . . . . . . . . . . . . . . . . . . . . . 4 6.3 pulse width modulation frequency . . . . . . . . . . 5 6.4 protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 6.4.1 thermal foldback . . . . . . . . . . . . . . . . . . . . . . . 6 6.4.2 overtemperature protection . . . . . . . . . . . . . . . 6 6.4.3 overcurrent protection . . . . . . . . . . . . . . . . . . . 6 6.4.4 window protection . . . . . . . . . . . . . . . . . . . . . . 8 6.4.5 supply voltage protections . . . . . . . . . . . . . . . . 8 6.5 diagnostic output . . . . . . . . . . . . . . . . . . . . . . . 9 6.6 differential inputs . . . . . . . . . . . . . . . . . . . . . . . 9 7 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 10 8 thermal characteristics. . . . . . . . . . . . . . . . . . 11 9 static characteristics. . . . . . . . . . . . . . . . . . . . 11 10 dynamic characteristics . . . . . . . . . . . . . . . . . 13 10.1 dynamic characteristics (se) . . . . . . . . . . . . . 13 10.2 dynamic characteristics (btl) . . . . . . . . . . . . 14 11 switching characteristics . . . . . . . . . . . . . . . . 15 12 application information. . . . . . . . . . . . . . . . . . 15 12.1 btl application . . . . . . . . . . . . . . . . . . . . . . . . 15 12.2 output power estimation. . . . . . . . . . . . . . . . . 15 12.3 external clock . . . . . . . . . . . . . . . . . . . . . . . . . 16 12.4 noise. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 12.5 heat sink requirements. . . . . . . . . . . . . . . . . . 17 12.6 pumping effects . . . . . . . . . . . . . . . . . . . . . . . 17 12.7 application schematics . . . . . . . . . . . . . . . . . . 18 12.8 curves measured in reference design . . . . . . 21 13 package outline . . . . . . . . . . . . . . . . . . . . . . . . 27 14 revision history . . . . . . . . . . . . . . . . . . . . . . . . 28 15 legal information. . . . . . . . . . . . . . . . . . . . . . . 29 15.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 29 15.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 15.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 15.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 16 contact information. . . . . . . . . . . . . . . . . . . . . 29 17 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

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